Stiction Recovery of Silicon Oxide Cantilevers with Heating Elements for MEMS
Author:
Affiliation:
1. Tokyo Institute of Technology
Publisher
Institute of Electrical Engineers of Japan (IEE Japan)
Subject
Electrical and Electronic Engineering,Mechanical Engineering
Link
https://www.jstage.jst.go.jp/article/ieejsmas/124/3/124_3_75/_pdf
Reference11 articles.
1. (1) N. Fujitsuka and J. Sakata : “A new processing technique to prevent stiction using silicon selective etching for SOI-MEMS”, Sensors and Actuators A: Physical, Vol. 97-98, pp. 716-719 (2002)
2. (2) I. Jafri, H. Busta, and S. Walsh :“Critical Point Drying and Cleaning for MEMS Technology”, Proc. of SPIE, the international Society for Optical Engineering, 3880, pp. 51-58 (1999)
3. (3) James W. Robert Ashurst, Christina Yau, Carlo Carraro, Christina Lee, G. Jonathan Kluth, Roger T. Howe, and Roya Maboudian : “Alkene based monolayer films as anti-stiction coatings for polysilicon MEMS”, Sensors and Actuators A: Physical, Vol. 91, pp. 239-248 (2001)
4. (4) M. Nakata, K. Fushinobu, and K. Okazaki : “Stiction Recovery of Silicon Oxide Cantilevers with Pulse Laser Irradiation for MEMS”, T. IEE Japan, Vol. 122-E, No. 3, pp. 144-149 (2002-3) (in Japanese)
5. (5) K. Fushinobu : “Stiction Recovery of Micro-Cantilevers with Excimer Laser Irradiation”, T. IEE Japan, Vol. 119-E, No. 6, pp. 340-345 (1999-6) (in Japanese)
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