Analysis of Electron Generation Mechanism under Repetition Voltage Application in Nitrogen
Author:
Affiliation:
1. Faculty of Engineering, Tokyo City University
Publisher
Institute of Electrical Engineers of Japan (IEE Japan)
Subject
Electrical and Electronic Engineering
Link
https://www.jstage.jst.go.jp/article/ieejfms/135/4/135_198/_pdf
Reference10 articles.
1. (2) M. Rokunohe, Y. Yagihashi, K. Aoyagi, T. Oomori, and F. Endo : “Development of SF6-free 7.25 kV GIS”, IEEE Trans. Power Deliv., Vol. 22, No. 3, pp. 1869-1876 (2007)
2. (3) S. C. Haydon and O. M. Williams : “Experimental investigations of ionization growth in nitrogen.II”, J. Phys. B: Atom. Molec. Phys., Vol. 6, pp. 227-231 (1973)
3. (4) M. M. Pejovic, E. N. Zivanovic, and M. M. Pejovic : “Kinetics of ions and active species in the afterglow and their influence on the memory effect in nitrogen at low pressures”, J. Phys. D: Appl. Phys., Vol. 37, pp. 200-210 (2004)
4. (5) Y. Kuroki and M. Yumoto : “Repression of Primary Electrons by Mixing the NO or SF6 with N2 Under High Pressure”, IEEJ Trans. FM, Vol. 127, No. 12, pp. 777-783 (2007) (in Japanese)
5. (6) F. Kobayashi, S. Hamano, T. Iwao, and M. Yumoto : “Decrease of Primary Electron Number by NO, CO2 and SF6 Mixing at the Breakdown in High Pressure Nitrogen”, IEEJ Trans. FM, Vol. 128, No. 4, pp. 203-208 (2008) (in Japanese)
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