Improvement of Light Emission from Electroluminescent Device using Nanocrystalline Silicon
Author:
Affiliation:
1. Tokai University
2. Michigan State University
3. The University of Electro-Communications
Publisher
Institute of Electrical Engineers of Japan (IEE Japan)
Subject
Electrical and Electronic Engineering
Link
https://www.jstage.jst.go.jp/article/ieejfms/122/6/122_6_616/_pdf
Reference37 articles.
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2. (2) A.G. Cullis, L.T. Canham, and P.D.J. Calcott: “The structural and luminescence properties of porous silicon”, J. Appl. Phys., 82, 909∼965 (1997)
3. (3) M.L. Brongersma, A. Polman, K.S. Min, and H.A. Atwater: “Depth distribution of luminescent Si nanocrystals in Si implanted SiO2 films on Si”, J. Appl. Phys., 86, 759∼763 (1999)
4. (4) P. Photopoulos, A.G. Nassiopoulou, D.N. Kouvatsos, and A. Travlos: “Photoluminescence from nanocrystalline silicon in Si/SiO2 superlattices”, Appl. Phys. Lett., 76, 3588∼3590 (2000)
5. (5) S. Guha, S.B. Quadri, R.G. Musket, M.A. Wall, and Tsutomu Shimizu-Iwayama: “Characterization of Si nanocrystals grown by annealing SiO2 films with uniform concentrations of implanted Si”, J. Appl. Phys., 88, 3954∼3961 (2000)
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