Implementation of a Gate Drive Circuit for Reducing Switching Loss and Surge Voltage

Author:

Hayashi Shin-Ichiro1,Wada Keiji1

Affiliation:

1. Tokyo Metropolitan University

Publisher

Institute of Electrical Engineers of Japan (IEE Japan)

Subject

Electrical and Electronic Engineering,Industrial and Manufacturing Engineering

Reference26 articles.

1. (1) S. Dimitrijev and P. Jamet: “Advances in SiC power MOSFET technology”, Microelectronics Reliability, Vol. 43, pp. 225-233 (2003)

2. (2) R. Singh: “Reliability and performance limitations in SiC power devices”, Microelectronics Reliability, Vol. 46, pp. 713-730 (2006)

3. (3) K. Wada, A. Hino, and M. Ando: “High-Speed Analysis of Bus Bar Inductance for Laminated Structure”, IEEJ Journal of Industry Applications, Vol. 2, No. 4, pp. 189-194 (2013)

4. (4) D. Kawase, M. Inaba, K. Horiuchi, and K. Saito: “High voltage module with low internal inductance for next chip generation—next High Power Density Dual (nHPD2)”, Power Conversion and Intelligent Motion (PCIM) Europe 2015, pp. 217-223 (2015)

5. (5) K. Takao, T. Shinohe, T. Yamamoto, K. Hasegawa, and M. Ishida: “1200V-360A SiC Power Module with Phase Leg Clustering Concept for Low Parasitic Inductance and High Speed Switching”, International Conference on Integrated Power Electronics Systems (CIPS) 2014, pp. 1-7 (2014)

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1. Volume Minimization of Current Type ACC with Rogowski Coil;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

2. Influence of PCB Stray Inductance and Drive Conditions of Cascode Type Power Device on a Versatile Package;IEEJ Transactions on Industry Applications;2022-06-01

3. Measurement of Switching Waveforms with a Current Sensor for a Laminated Bus Bar;IEEJ Transactions on Industry Applications;2018-05-01

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