1. (1) S. Dimitrijev and P. Jamet: “Advances in SiC power MOSFET technology”, Microelectronics Reliability, Vol. 43, pp. 225-233 (2003)
2. (2) R. Singh: “Reliability and performance limitations in SiC power devices”, Microelectronics Reliability, Vol. 46, pp. 713-730 (2006)
3. (3) K. Wada, A. Hino, and M. Ando: “High-Speed Analysis of Bus Bar Inductance for Laminated Structure”, IEEJ Journal of Industry Applications, Vol. 2, No. 4, pp. 189-194 (2013)
4. (4) D. Kawase, M. Inaba, K. Horiuchi, and K. Saito: “High voltage module with low internal inductance for next chip generation—next High Power Density Dual (nHPD2)”, Power Conversion and Intelligent Motion (PCIM) Europe 2015, pp. 217-223 (2015)
5. (5) K. Takao, T. Shinohe, T. Yamamoto, K. Hasegawa, and M. Ishida: “1200V-360A SiC Power Module with Phase Leg Clustering Concept for Low Parasitic Inductance and High Speed Switching”, International Conference on Integrated Power Electronics Systems (CIPS) 2014, pp. 1-7 (2014)