Reliability Design for Neutron Induced Single-Event Burnout of IGBT-Reference-Cited by-同舟云学术

Reliability Design for Neutron Induced Single-Event Burnout of IGBT

Published:2011 Issue:8 Volume:131 Page:992-999
ISSN:0913-6339
Container-title:IEEJ Transactions on Industry Applications
language:en
Short-container-title:IEEJ Trans. IA

Author:

Shoji Tomoyuki¹,Nishida Shuichi²,Ohnishi Toyokazu²,Fujikawa Touma²,Nose Noboru²,Hamada Kimimori²,Ishiko Masayasu¹

Affiliation:

1. Toyota Central R&D Labs., Inc.

2. Toyota Motor Corporation

Publisher

Institute of Electrical Engineers of Japan (IEE Japan)

Subject

Electrical and Electronic Engineering,Industrial and Manufacturing Engineering

Link

http://www.jstage.jst.go.jp/article/ieejias/131/8/131_8_992/_pdf

Reference7 articles.

1. (1) J. F. Ziegler: “Terrestrial cosmic ray”, IBM J. RES. DEVELOP., Vol. 40, No. 1 (1996-1)

2. (2) W. Kaindl, G. Soelkner, H. J. Schulze, and G. Wachutka: “Cosmic radiation-induced failure mechanism of high voltage IGBT”, Proc. of ISPSD, pp. 199-202 (2005)

3. (3) E. Normand, J. L. Wert, D. L. Oberg, P. R. Majewski, P. Voss, and S. A. Wender: “Neutron Induced Single Event Burnout in High Voltage Electronics”, IEEE Trans. Nuclear Science, Vol. 44, No. 6, pp. 2358-2366

4. (4) T. F. Wrobel and D. E. Beutler: “Solutions to heavy ion induced avalanche burnout in power devices”, IEEE Trans. Nuclear Science, Vol. 39, No. 6, pt. 1, p. 1636-1641

5. (5) G. H. Johnson, J. M. Palau, C. Dachs, K. F. Galloway, and R. D. Schrimpf: “A review of the techniques used for modeling single-event effects in power MOSFETs”, IEEE Trans. Nuclear Science, Vol. 43, No. 2, pp. 546-560

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Current Control for Multi-Phase Machine under Multiple Open-Faults Condition Using Orthonormalized Extended Clarke Transformation;IEEJ Transactions on Industry Applications;2024-07-01

2. High-Energy Proton and Atmospheric-Neutron Irradiations of SiC Power MOSFETs: SEB Study and Impact on Channel and Drift Resistances;IEEE Transactions on Nuclear Science;2023-08

3. Reliability and Reliability Testing;Semiconductor Power Devices;2018

4. Technical Development Report;IEEJ Transactions on Industry Applications;2016

5. Cosmic ray neutron‐induced single‐event burnout in power devices;IET Power Electronics;2015-12