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High di/dt Switching Characteristics of a SiC Schottky Barrier Diode

  • Published:2004 Issue:9 Volume:124 Page:917-923
  • ISSN:0913-6339
  • Container-title:IEEJ Transactions on Industry Applications
  • language:en
  • Short-container-title:IEEJ Trans. IA

Author:

Takao Kazuto1,Yatsuo Tsutomu1,Arai Kazuo1

Affiliation:

1. National Institute of Advanced Industrial Science and Technology, Power Electronics Research Center

Publisher

Institute of Electrical Engineers of Japan (IEE Japan)

Subject

Electrical and Electronic Engineering,Industrial and Manufacturing Engineering

Reference11 articles.

1. (1) E. Masada: “Power Electronics in Industrial Strategy for Modern Society”, PCC-Osaka 2002 (2002)

2. (2) 資源エネルギー庁省エネルギー対策課:「省エネルギー技術戦略」報告書 (2002)

3. Recent Power Devices Trend.

4. Recent Power Devices Trend.

5. (4) 荒井和雄·吉田貞史 共編:SiC素子の基礎と応用, 第1章, オーム社 (2003)

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