A Resonant Gate-Drive Circuit for Fast High-Voltage Power Semiconductor Devices with Optical Isolation of Both Control Signal and Power Supply
Author:
Affiliation:
1. Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology
Publisher
Institute of Electrical Engineers of Japan (IEE Japan)
Subject
Electrical and Electronic Engineering,Industrial and Manufacturing Engineering
Link
http://www.jstage.jst.go.jp/article/ieejias/129/3/129_3_303/_pdf
Reference17 articles.
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2. (2) S. Harada, Y. Hayashi, K. Takao, A. Kinoshita, M. Kato, M. Okamoto, T. Kato, S. Nishizawa, T. Yatsuo, K. Fukuda, H. Ohashi, and K. Arai: “Demonstration of motor drive with SiC normally-off IBMOSFET/SBD power converter”, in Proc. of IEEE ISPSD, pp. 289-292 (2007-5)
3. Development of a thyristor valve for next generation 500 kV HVDC transmission systems
4. (4) K. Wada, K. Shirakawa, and T. Shimizu: “Discussion of internal Noise Currents in a Control Circuit on a 200-kHz Switching PWM Inverter”, in Proc. of PCC2007, pp. 423-428 (2007-4)
5. (5) T. Shinohe, M. Yamaguchi, and K. Hoshi: “Power supply circuit”, US Patent, No. 6, 111, 454 (2000-3)
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3. 4-kV 100-Mbps monolithic isolator on SOI with trench isolation for wideband networks;IEEJ Transactions on Electrical and Electronic Engineering;2013-09-18
4. Design of high-temperature SiC three-phase AC-DC converter for >100°C ambient temperature;2010 IEEE Energy Conversion Congress and Exposition;2010-09
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