Forward Voltage Degradation of 4H-SiC pin Diodes and High Voltage 4H-SiC pin Diodes on the (000-1) C-Face with Reduced Forward Degradation-Reference-Cited by-同舟云学术

Forward Voltage Degradation of 4H-SiC pin Diodes and High Voltage 4H-SiC pin Diodes on the (000-1) C-Face with Reduced Forward Degradation

Published:2008 Issue:8 Volume:128 Page:1013-1019
ISSN:0913-6339
Container-title:IEEJ Transactions on Industry Applications
language:en
Short-container-title:IEEJ Trans. IA

Author:

Nakayama Koji¹,Sugawara Yoshitaka¹,Ishii Ryosuke¹,Tsuchida Hidekazu²,Miyanagi Toshiyuku²,Kamata Isao²,Nakamura Tomonori²

Affiliation:

1. The Kansai Electric Power Co., Inc.

2. Central Research Institute of Electric Power Industry

Publisher

Institute of Electrical Engineers of Japan (IEE Japan)

Subject

Electrical and Electronic Engineering,Industrial and Manufacturing Engineering

Link

http://www.jstage.jst.go.jp/article/ieejias/128/8/128_8_1013/_pdf

Reference15 articles.

1. Progress of Power Semiconductor Devices. 5. Recent Development of SiC Power Device.

2. Rapidly Advancing Developments of SiC Power Devices and their Applications

3. (3) C. F. Huang and J. A. Cooper, Jr.: “4H-SiC npn bipolar junction transistors with BVCEO>3,200V”, Proceedings of the 14th International Symposium on Power Semiconductor Devices & Ics 2002, pp. 57-60 (2002)

4. (4) Y. Sugawara, K. Asano, R. Singh, J. Palmour, and D. Takayama: “4.5kV Novel High Voltage High Performance SiC-FET `SIAFET”', Proceedings of the 12th International Symposium on Power Semiconductor Devices & Ics 2000, pp. 105-108 (2000)

5. (5) K. Asano, Y. Sugawara, S. Ryu, R. Singh, J. Palmour, T. Hayashi, and D. Takayama: “5.5kV Normally-off Low RonS 4H-SiC SEJFET,” Proceedings of the 13th International Symposium on Power Semiconductor Devices & Ics 2001, pp. 23-26 (2001)

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Experimental Investigation on Reducing Reverse Recovery Loss of SiC-MOSFET;IEEJ Transactions on Electronics, Information and Systems;2017

2. Cause of Forward Voltage Degradation for 4H-SiC PiN Diode with Additional Process;MRS Proceedings;2014