Experimental Investigation on Reducing Reverse Recovery Loss of SiC-MOSFET
Author:
Affiliation:
1. DENSO CORPORATION
2. University of Tsukuba
Publisher
Institute of Electrical Engineers of Japan (IEE Japan)
Subject
Electrical and Electronic Engineering
Link
https://www.jstage.jst.go.jp/article/ieejeiss/137/2/137_208/_pdf
Reference11 articles.
1. (1) K. Hamada, M. Nagao, M. Ajioka, and F. Kawai : “SiC-Emerging Power Device Technology for Next-Generation Electrically Powered Environmentally Friendly Vehicles”, IEEE Trans. ED, Vol. 62, No. 2, pp. 278-285 (2015)
2. (3) T. Funaki, M. Matsushita, M. Sasagawa, T. Kimoto, and T. Hikihara : “A Study on SiC Devices in Synchronous Rectification of DC-DC Converter”, Proc. IEEE APEC, pp. 339-344 (2007)
3. (4) H. Liu, H. Wu, Y. Lu, Y. Xing, and K. Sun : “A high efficiency inverter based on SiC MOSFET without externally antiparalleled diodes”, Proc. IEEE APEC 2014, pp. 163-167 (2014)
4. (5) R. Horff, A. März, M. Lechler, and M. M. Barkran : “Optimised switching of a SiC MOSFET in a VSI using the body diode and additional Schottky barrier diode”, Proc. IEEE EPE'15, pp. 1-11 (2015)
5. (6) Z. Wang, J. Ouyang, J. Zhang, X. Wu, and K. Sheng : “Analysis on reverse recovery characteristic of SiC MOSFET intrinsic diode”, Proc. IEEE ECCE2014, pp. 2832-2837 (2014)
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