A Consideration of Temperature Coefficient on Gate-Voltage-Controlled PTAT Voltage Generator under Ultra Low Power Supply-Reference-Cited by-同舟云学术

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A Consideration of Temperature Coefficient on Gate-Voltage-Controlled PTAT Voltage Generator under Ultra Low Power Supply

Published:2011 Issue:7 Volume:131 Page:1319-1320
ISSN:0385-4221
Container-title:IEEJ Transactions on Electronics, Information and Systems
language:en
Short-container-title:IEEJ Trans.EIS

Author:

Fujitsuka Junichi¹,Sekine Kawori¹

Affiliation:

1. School of Science and Technology, Meiji University

Publisher

Institute of Electrical Engineers of Japan (IEE Japan)

Subject

Electrical and Electronic Engineering

Link

http://www.jstage.jst.go.jp/article/ieejeiss/131/7/131_7_1319/_pdf

Reference5 articles.

1. (1) 宮尾亘:「半導体センサ工学」,朝倉書店,pp. 46-47 (1993)

2. (2) B. Razavi : “Design of Analog CMOS Integrated Circuit”, McGraw-Hill Companies Inc., pp. 390-392 (2001)

3. (3) K. E. Kuijk : “A Precision Reference Voltage Source”, IEEE J. Solid-State Circuits, Vol. SC-8, No. 3, pp. 222-226 (1973-6)

4. (4) K. Takakubo, T. Eto, and H. Takakubo : “Analysis and Modeling of Leakage Current for Four-Terminal MOSFET in Off-State and Low Leakage Switches”, IEICE Trans. Fundamentals, Vol. E92-A, No. 2, pp. 421-429 (2009-2)

5. PTAT Voltage Generator under Ultra Low Power Supply with Two Subthreshold MOSFETs between Rails

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