Characterization of Aluminum Silicate (AlSiO) Insulator Films-Reference-Cited by-同舟云学术

Characterization of Aluminum Silicate (AlSiO) Insulator Films

Published:2007 Issue:11 Volume:127 Page:1822-1825
ISSN:0385-4221
Container-title:IEEJ Transactions on Electronics, Information and Systems
language:en
Short-container-title:IEEJ Trans.EIS

Author:

Komatsu Naoyoshi¹,Sugino Takashi¹,Kimura Chiharu¹,Aoki Hidemitsu¹,Kurimoto Hirofumi¹,Chikamatsu Kentaro¹

Affiliation:

1. Department of Electrical, Electronic and Information Engineering, Graduate School of Engineering Osaka University

Publisher

Institute of Electrical Engineers of Japan (IEE Japan)

Subject

Electrical and Electronic Engineering

Link

http://www.jstage.jst.go.jp/article/ieejeiss/127/11/127_11_1822/_pdf

Reference12 articles.

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3. (3) G. Ferrari, J. R. Watling, S. Roy, J. R. Barker, and A. Asenov : “Beyond SiO₂ technology: Simulation of the impact of high-k dielectrics on mobility”, J. Non-Crystalline Sol., Vol. 353, pp. 630-634 (2007)

4. (4) L. Aguilera, E. Amat, R. Rodriguez, M. Porti, M. Nafria, and X. Aymerich : “Analysis of the degradation of HfO₂/SiO₂ gate stacks using nanoscale and device level techniques”, Microelectronic Engineering, Vol. 84, Issues 5-8, pp. 1618-1621 (2007-5/8)

5. (5) K. Shanmugasundaram, M. Brubaker, K. Chang, P. Mumbauer, P. Roman, and J. Ruzyllo : “Studies of solution processed metal oxides on silicon”, Microelectronic Engineering, Vol. 84, Issues 9-10, pp. 2294-2297 (2007-9/10)

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