Low-Temperature Formation of Poly-Si<sub>1-x</sub>Ge<sub>x</sub> (0≤x≤1) Films by Ni-Induced Lateral Crystallization for Advanced TFT-Reference-Cited by-同舟云学术

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Low-Temperature Formation of Poly-Si_1-xGe_x (0≤x≤1) Films by Ni-Induced Lateral Crystallization for Advanced TFT

Published:2006 Issue:9 Volume:126 Page:1073-1078
ISSN:0385-4221
Container-title:IEEJ Transactions on Electronics, Information and Systems
language:en
Short-container-title:IEEJ Trans.EIS

Author:

Kanno Hiroshi¹,Kenjo Atsushi¹,Sadoh Taizoh¹,Miyao Masanobu¹

Affiliation:

1. Department of Electronics, Kyushu University

Publisher

Institute of Electrical Engineers of Japan (IEE Japan)

Subject

Electrical and Electronic Engineering

Link

https://www.jstage.jst.go.jp/article/ieejeiss/126/9/126_9_1073/_pdf

Reference14 articles.

1. (1) M. Miyao and K. Nakagawa : “Silicon super-heterostructure technology and its application to noble devices”, OYO BUTURI, Vol. 61, No. 11, pp. 1104-1115 (1992-11) (in Japanese)

2. (2) M. Miyao, K. Nakagawa, H. Nakahara, Y. Kiyota, and M. Kondo : “Recent progress of heterostructure technologies for novel silicon devices”, Appl. Surf. Sci., Vol. 102, pp. 360-371 (1996)

3. (3) J. H. Kim and J. Y. Lee : “Al-Induced Crystallization of an Amorphous Si Thin Film in a Polycrystalline Al/Native SiO₂/Amorphous Si Structure”, Jpn. J. Appl. Phys., Vol. 35, No. 4A, pp. 2052-2056 (1996)

4. (4) M. Miyasaka, K. Makihira, T. Asano, E. Polychroniadis, and J. Stoemenos : “In situ observation of nickel metal-induced lateral crystallization of amorphous silicon thin films”, Appl. Phys. Lett., Vol. 80, No. 6, pp. 944-946 (2002)

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