Development Status of New Material Power Devices-Reference-Cited by-同舟云学术

Development Status of New Material Power Devices

Published:2017 Issue:1 Volume:137 Page:13-19
ISSN:0385-4221
Container-title:IEEJ Transactions on Electronics, Information and Systems
language:en
Short-container-title:IEEJ Trans.EIS

Author:

Iwamuro Noriyuki¹,Bandoh Akira²,Yano Koji³,Miyazawa Tetsuya⁴,Eguchi Hiroomi⁵,Miura Yoshinao⁶,Shikauchi Yoji⁷,Ikeda Nariaki⁸,Uemoto Yasuhiro⁹,Hiraiwa Atsushi¹⁰

Affiliation:

1. Faculty of Pure and Applied Sciences, University of Tsukuba

2. Showa Denko K. K.

3. Faculty of Engineering, Graduate Faculty of Interdisciplinary Research, University of Yamanashi

4. Central Research Institute of Electric Power Industry (CRIEPI)

5. TOYOTA MOTOR Corp., Power Electronics Development Div.

6. Renesas System Design Co., Ltd., Development Div. 3

7. Sanken Electric Co., Ltd.

8. Furukawa Electric Co. Ltd.

9. Panasonic Semiconductor Solutions Co., Ltd.

10. Research Organization for Nano & Life Innovation, Waseda University

Publisher

Institute of Electrical Engineers of Japan (IEE Japan)

Subject

Electrical and Electronic Engineering

Link

https://www.jstage.jst.go.jp/article/ieejeiss/137/1/137_13/_pdf

Reference37 articles.

1. (1) A.R. Powell et al.: “Bulk Growth of Large Area SiC Crystals”, Extended Abstract of International Conference on Silicon Carbide and Related Materials, Mo-2B-1 (2015)

2. (2) H. Tsuchida et al.: “Advances in Fast Epitaxial Growth of 4H-SiC and Defect Reduction”, Extended Abstract of International Conference on Silicon Carbide and Related Materials, Tu-1B-1 (2015)

3. (3) E. Saito et al.: “Control of Carrier Lifetimes in Thick n-type 4H-SiC Epilayers by High-temperature Annealing”, Extended Abstract of International Conference on Silicon Carbide and Related Materials, We-1A-3 (2015)

4. (4) H. Yano et al.: “Threshold Voltage Instability in 4H-SiC MOSFETs With Phosphorus-doped and Nitrided Gate Oxides”, IEEE Transactions on Electron Devices, Vol. 62, pp. 324-332 (2015)

5. (5) T. Kojima et al.: “Self-aligned Formation of the Trench Bottom Shielding region in 4H-SiC UMOSFETs”, Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials, pp. 948-949 (2015)

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