Electron transport and conduction band structure of GaSb

Abstract

Calculations have been made using the Fletcher and Butcher method in a three conduction band model to fit a wide range of experimental transport data for n-type samples of GaSb: viz. Hall coefficient and electrical conductivity as a function of temperature and as a function of pressure at room temperature, magnetoresistance as a function of magnetic field at different temperatures, and Nernst–Ettingshausen coefficients as a function of magnetic field. Various energy gap parameters and scattering coefficients have been taken as adjustable and values determined for these which give good fits to all of the experimental data. Values of mobility for each of the Γ, L, and X bands have then been calculated as a function of temperature.