Dislocation detection using polarization-resolved photoluminescence

Abstract

Polarization-resolved photoluminescence is a technique that is capable of accurately measuring mechanical stress in luminescent III–V semiconductors. In this paper, the use of polarization-resolved photoluminescence for the detection and characterization of dislocations from the observed patterns of surface stresses is discussed. Formulae are presented for the calculation of the surface stresses owing to several types of threading and misfit dislocations, and calculated distributions of the expected degree of polarization are illustrated. Examples are given of measured distributions of the degree of polarization, showing excellent agreement with the calculated distributions.