Author:
Thompson A. G.,Woolley J. C.
Abstract
The electrorellectance of GaAs, InAs, and the GaxIn1−xAs alloys has been measured between 2 and 6 eV at room temperature. The E1, E0′, and E2 transitions and their associated split-off and oscillatory components have been observed, and their behavior as a function of alloy composition is presented. A more detailed account of the band structure of the compounds and their alloys than was obtained by earlier reflectance results is given.
Publisher
Canadian Science Publishing
Subject
General Physics and Astronomy
Cited by
37 articles.
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