Determination of Alloy Composition in the GaAs—InAs System by Reflectivity-Reference-Cited by-同舟云学术

Determination of Alloy Composition in the GaAs—InAs System by Reflectivity

Published:1966-05 Issue:3 Volume:20 Page:161-163
ISSN:0003-7028
Container-title:Applied Spectroscopy
language:en
Short-container-title:Appl Spectrosc

Author:

Jones Charlie E.¹

Affiliation:

1. Texas Instruments Incorporated, Dallas, Texas

Abstract

The composition of GaAs—InAs alloys can be determined by measuring the position of the E1 reflection maximum in the visible spectrum range. The composition is directly related to the energy value associated with the reflection peak. The reflection technique is rapid and nondestructive. The precision and accuracy of the method is good.

Publisher

SAGE Publications

Subject

Spectroscopy,Instrumentation

Link

http://journals.sagepub.com/doi/pdf/10.1366/000370266774386155

Reference7 articles.

1. Optical Constants of Germanium in the Region 1 to 10 ev

2. Effect of Temperature and Doping on the Reflectivity of Germanium in the Fundamental Absorption Region

3. Optical Constants of Silicon in the Region 1 to 10 ev

4. Optical Studies of the Band Structure of InP

5. Reflectivity spectra of GaSbInSb and GaAsInAs alloys

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2. CHARACTERIZATION OF THE GROWN LAYERS;Semiconductor Heterojunctions;1974

3. On the optical energy gaps of substitutional solid solutions between some sulphides and selenides of II-VI compounds;Il Nuovo Cimento B Series 11;1971-10

4. Pseudopotential calculations of the band structure of GaAs, InAs and (GaIn) as alloys;Solid State Communications;1969-09

5. Preparation and Optical Properties of InAs1−xPxAlloys;Journal of Applied Physics;1969-07