Effect of hydrogen concentration on structure and photoelectric properties of a-Si:H films modified by femtosecond laser pulses
Author:
Affiliation:
1. Lomonosov Moscow State University, Faculty of Physics, Moscow, 119991 Russia.
2. National Research Centre “Kurchatov Institute”, Moscow, 123182 Russia.
3. Optoelectronics Research Centre, University of Southampton, Southampton, SO17 1BJ UK.
Abstract
Publisher
Canadian Science Publishing
Subject
General Physics and Astronomy
Link
http://www.nrcresearchpress.com/doi/pdf/10.1139/cjp-2013-0582
Reference14 articles.
1. Microcrystalline silicon and excimer laser crystallized silicon Thin Film Transistors on the same substratel
2. Nanocrystalline silicon solar cells from excimer laser crystallization of amorphous silicon
3. Thickness dependence of properties of excimer laser crystallized nano-polycrystalline silicon
4. Effect of the femtosecond laser treatment of hydrogenated amorphous silicon films on their structural, optical, and photoelectric properties
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1. Giant enhancement of free charge carrier concentration in boron-doped amorphous hydrogenated silicon under femtosecond laser crystallization;Applied Physics Letters;2018-11-12
2. Structural Anisotropy of Amorphous Silicon Films Modified by Femtosecond Laser Pulses;Optics and Spectroscopy;2018-06
3. Effect of Doping on the Properties of Hydrogenated Amorphous Silicon Irradiated with Femtosecond Laser Pulses;Physics of the Solid State;2018-04
4. Femtosecond laser pulse modification of amorphous silicon films: control of surface anisotropy;Laser Physics Letters;2018-03-26
5. Femtosecond Laser Crystallization of Boron-doped Amorphous Hydrogenated Silicon Films;Journal of Nano- and Electronic Physics;2016
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