Femtosecond Laser Crystallization of Boron-doped Amorphous Hydrogenated Silicon Films-Reference-Cited by-同舟云学术

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Femtosecond Laser Crystallization of Boron-doped Amorphous Hydrogenated Silicon Films

Published:2016 Issue:3 Volume:8 Page:03038-1-03038-3
ISSN:2077-6772
Container-title:Journal of Nano- and Electronic Physics
language:
Short-container-title:J. Nano- Electron. Phys.

Author:

Rybalko P. D., ,Khenkin M. V.,Forsh P. A.,Drevinskas R.,Matsukatova A. N.,Kazansky P.,Kazanskii A. G., , , , , ,

Publisher

Sumy State University

Subject

Condensed Matter Physics,General Materials Science,Radiation

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Phosphorous-Doped $\alpha$ -Si Film Crystallization Using Heat-Assisted Femtosecond Laser Annealing;IEEE Transactions on Semiconductor Manufacturing;2020-02

2. Structural Anisotropy of Amorphous Silicon Films Modified by Femtosecond Laser Pulses;Optics and Spectroscopy;2018-06

3. Femtosecond laser pulse modification of amorphous silicon films: control of surface anisotropy;Laser Physics Letters;2018-03-26

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