Etching Characteristics of ArF and EUV Resists in C4F6- and C4F8-based Dual-frequency Superimposed Capacitively-coupled Plasmas-Reference-Cited by-同舟云学术

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Etching Characteristics of ArF and EUV Resists in C4F6- and C4F8-based Dual-frequency Superimposed Capacitively-coupled Plasmas

Published:2011-06-15 Issue:6 Volume:58 Page:1622-1627
ISSN:0374-4884
Container-title:Journal of the Korean Physical Society
language:en
Short-container-title:J. Korean Phy. Soc.

Author:

Kwon B. S.,Kim J. S.,Lee N.-E.,Lee S. K.,Park Sung Wook

Publisher

Korean Physical Society

Subject

General Physics and Astronomy

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A comparative study of electron-impact cross sections of C4F6 isomers from 15 to 5000 eV;Physics of Plasmas;2019-06

2. Determination of the electron collision cross-section set for the C4F6 molecule by using an electron swarm study;Journal of the Korean Physical Society;2014-05

3. Effects of gas flow rate on the etch characteristics of a low-k sicoh film with an amorphous carbon mask in dual-frequency CF4/C4F8/Ar capacitively-coupled plasmas;Journal of the Korean Physical Society;2013-01

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