Effects of gas flow rate on the etch characteristics of a low-k sicoh film with an amorphous carbon mask in dual-frequency CF4/C4F8/Ar capacitively-coupled plasmas
Author:
Publisher
Korean Physical Society
Subject
General Physics and Astronomy
Link
http://link.springer.com/content/pdf/10.3938/jkps.62.67.pdf
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Hydrogenated amorphous carbon films deposited using plasma enhanced chemical vapor deposition processes;Korean Journal of Chemical Engineering;2023-05-17
2. High‐aspect‐ratio oxide etching using CF 4 /C 6 F 12 O plasma in an inductively coupled plasma etching system with low‐frequency bias power;Plasma Processes and Polymers;2022-11-23
3. Characterization of Low-k SiCOH Film Etching in Fluorocarbon Inductively Coupled Plasmas;Nanoscience and Nanotechnology Letters;2017-02-01
4. Elucidating the effects of gas flow rate on an SF6inductively coupled plasma and on the silicon etch rate, by a combined experimental and theoretical investigation;Journal of Physics D: Applied Physics;2016-08-24
5. Effects of Bias Pulsing on Etching of SiO2 Pattern in Capacitively-Coupled Plasmas for Nano-Scale Patterning of Multi-Level Hard Masks;Journal of Nanoscience and Nanotechnology;2016-05-01
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