Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator-Reference-Cited by-同舟云学术

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Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator

Published:2017-08 Issue:4 Volume:71 Page:185-190
ISSN:0374-4884
Container-title:Journal of the Korean Physical Society
language:en
Short-container-title:Journal of the Korean Physical Society

Author:

Roh Seung-Hyun,Eom Su-Keun,Choi Gwang-Ho,Kang Myoung-Jin,Kim Dong-Hwan,Hwang Il-Hwan,Seo Kwang-Seok,Lee Jae-Gil,Byun Young-Chul,Cha Ho-Young

Publisher

Korean Physical Society

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.3938/jkps.71.185.pdf

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of Recess Depth Under the Gate Area on the Vth-Shift for Fabricating Normally-Off Field Effect Transistors on AlGaN/GaN Heterostructures;Journal of Nanoscience and Nanotechnology;2020-07-01

2. High-Performance E-Mode AlGaN/GaN MIS-HEMT with Dual Gate Insulator Employing SiON and HfON;physica status solidi (a);2017-11-14

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