Selective Etching of Thick Si3N4, SiO2 and Si by Using CF4/O2 and C2F6 Gases with or without O2 or Ar Addition-Reference-Cited by-同舟云学术

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Selective Etching of Thick Si3N4, SiO2 and Si by Using CF4/O2 and C2F6 Gases with or without O2 or Ar Addition

Published:2009-05-15 Issue:5(1) Volume:54 Page:1816-1823
ISSN:0374-4884
Container-title:Journal of the Korean Physical Society
language:en
Short-container-title:J. Korean Phy. Soc.

Author:

Lee Hee Kwan,Chung Kwan Soo,Yu Jae Su

Publisher

Korean Physical Society

Subject

General Physics and Astronomy

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