Dry Etching of Germanium by Using Inductively Coupled CF$_{4}$Plasma
Author:
Publisher
Korean Physical Society
Subject
General Physics and Astronomy
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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3. Etching of GeSe2 chalcogenide glass and its pulsed laser deposited thin films in SF6, SF6/Ar and SF6/O2 plasmas;Plasma Sources Science and Technology;2020-10-01
4. HIGH-RATE HIGH-DENSITY ICP ETCHING OF GERMANIUM;High Temperature Material Processes An International Quarterly of High-Technology Plasma Processes;2019
5. Nanoscale Ge fin etching using F- and Cl-based etchants for Ge-based multi-gate devices;Semiconductor Science and Technology;2018-03-15
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