?Effect of Nitrogen Doping and Working Pressure on the Crystallization of a Ge1Sb4Te7 Thin Film for PRAM Application-Reference-Cited by-同舟云学术

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?Effect of Nitrogen Doping and Working Pressure on the Crystallization of a Ge1Sb4Te7 Thin Film for PRAM Application

Published:2009-11-14 Issue:5(1) Volume:55 Page:1896-1900
ISSN:0374-4884
Container-title:Journal of the Korean Physical Society
language:en
Short-container-title:J. Korean Phy. Soc.

Author:

Choi Doo Jin,Kim Hyung Keun,Lee Seung Yun,Shin Sangwoo,Cho Hyung Hee,Roh Jae Sung

Publisher

Korean Physical Society

Subject

General Physics and Astronomy

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Phase change-regulated nonlinear optical properties of GeSb4Te7 films prepared by RF magnetron sputtering;Journal of Materials Science: Materials in Electronics;2023-08

2. Role of carbon-rings in polycrystalline GeSb2Te4 phase-change material;Journal of Alloys and Compounds;2019-04

3. Multi-variable thermal design of T-structured phase-change memory cell using advanced response surface method;Microelectronic Engineering;2012-03

4. Effects of Ag doping on the crystallization properties of Sb-rich GeSb thin films;Thin Solid Films;2011-06

5. Considerable changes in crystallization process delivered by N doping in Te-free, Sb-rich GeSb binary alloy;Current Applied Physics;2011-05

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