Considerable changes in crystallization process delivered by N doping in Te-free, Sb-rich GeSb binary alloy
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference13 articles.
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4. Nanoscale observations on the degradation phenomena of phase-change nonvolatile memory devices using Ge2Sb2Te5;Yoon;Japanese Journal of Applied Physics,2007
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