Comparison of Germanium and Silicon Dry Etching by Using Inductively Coupled BCl3 Plasma-Reference-Cited by-同舟云学术

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Comparison of Germanium and Silicon Dry Etching by Using Inductively Coupled BCl3 Plasma

Published:2010-01-15 Issue:1 Volume:56 Page:59-65
ISSN:0374-4884
Container-title:Journal of the Korean Physical Society
language:en
Short-container-title:J. Korean Phy. Soc.

Author:

Kim Taek Sung,Yang H. Y.,Choi S. S.,Jeong T. S.,Kang S.,Shim K. H.

Publisher

Korean Physical Society

Subject

General Physics and Astronomy

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. HIGH-RATE HIGH-DENSITY ICP ETCHING OF GERMANIUM;High Temperature Material Processes An International Quarterly of High-Technology Plasma Processes;2019

2. Vertical and bevel-structured SiC etching techniques incorporating different gas mixture plasmas for various microelectronic applications;Scientific Reports;2017-06-20

3. Surface-dependent scenarios for dissolution-driven motion of growing droplets;Scientific Reports;2017-04-19

4. Wide Bandgap Materials: Plasma Etching;Encyclopedia of Plasma Technology;2016-12-12

5. Effect of BCl3in chlorine-based plasma on etching 4H-SiC for photoconductive semiconductor switch applications;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2014-09

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