Hall mobility manipulation in TiO2−x semiconductor films by hydrogen-ion irradiation-Reference-Cited by-同舟云学术

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Hall mobility manipulation in TiO2−x semiconductor films by hydrogen-ion irradiation

Published:2013-03 Issue:5 Volume:62 Page:781-786
ISSN:0374-4884
Container-title:Journal of the Korean Physical Society
language:en
Short-container-title:Journal of the Korean Physical Society

Author:

Yeo C. S.,Chung Kwun-Bum,Song J. H.,Chae K. H.,Park Jin-Seong,Song J. -H.,Park Sang Han,Cho Mann-Ho

Publisher

Korean Physical Society

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.3938/jkps.62.781.pdf

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hydrogen Behavior in Top Gate Amorphous In–Ga–Zn–O Device Fabrication Process During Gate Insulator Deposition and Gate Insulator Etching;IEEE Transactions on Electron Devices;2021-06

2. Modulation of the electrical properties in amorphous indium-gallium zinc-oxide semiconductor films using hydrogen incorporation;Applied Physics Letters;2017-12-11

3. Enhancement of Electrical Properties of TiO2−x Oxide Semiconductor by d-Orbital Ordering Using Swift Heavy Ni-Ion Irradiation at Room Temperature;Journal of Electronic Materials;2016-11-11

4. Modulation of electrical mobility in Au ion irradiated titanium oxide with crystal field splitting;Japanese Journal of Applied Physics;2016-10-17

5. Comparative Studies of Long-Term Ambiance and Electrical Stress Stability of IGZO Thin-Film Transistors Annealed Under Hydrogen and Nitrogen Ambiance;IEEE Transactions on Electron Devices;2016-05

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