Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
Author:
Publisher
Korean Physical Society
Subject
General Physics and Astronomy
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Probing electronic and dielectric properties of ultrathin Ga2O3/Al2O3 atomic layer stacks made with in vacuo atomic layer deposition;Journal of Applied Physics;2024-07-10
2. Transformation of charge polarity at HfO2/GaN interfaces through post-deposition annealing;Journal of the Korean Physical Society;2024-02-11
3. Trap‐Assisted Memristive Switching in HfO2‐Based Devices Studied by In Situ Soft and Hard X‐Ray Photoelectron Spectroscopy;Advanced Electronic Materials;2023-04-24
4. Group IV Transition Metal (M = Zr, Hf) Precursors for High-κ Metal Oxide Thin Films;Inorganic Chemistry;2021-11-23
5. Enhanced interfacial reaction of precursor and low temperature substrate in HfO2 atomic layer deposition with highly Ar diluted O2 plasma;Journal of Physics Communications;2020-09-01
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