Bonding Configuration and Electrical Properties of Carbon-Incorporated Low-Dielectric-Constant SiOC(-H) Films withNano-Pore Structures Deposited by Using PECVD
Author:
Publisher
Korean Physical Society
Subject
General Physics and Astronomy
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Chemical structure characteristics of flexible low-k SiCOH thin films etched by inductively coupled plasma-reactive ion etching process using FTIR and XPS spectra analysis;Microelectronic Engineering;2024-09
2. Characterization of flexible low-dielectric constant carbon-doped oxide (SiCOH) thin films under repeated mechanical bending stress;Journal of Materials Science;2022-11-27
3. Transforming gum wastes into high tap density micron-sized carbon with ultra-stable high-rate Li storage;Electrochimica Acta;2021-01
4. Critical properties and charge transport in ethylene bridged organosilica low-κ dielectrics;Journal of Applied Physics;2020-05-21
5. High-performance ultra-low-k fluorine-doped nanoporous organosilica films for inter-layer dielectric;Journal of Materials Science;2018-10-22
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