Wet Etching of a Gallium Indium Zinc Oxide Semiconductor for ThinFilm Transistor Application
Author:
Publisher
Korean Physical Society
Subject
General Physics and Astronomy
Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Technology Computer-Aided Design-Based Simulation Program with Integrated Circuit Emphasis Model for Back-Channel-Etched Thin-Film Transistors with Floating Metal Components;Journal of Nanoscience and Nanotechnology;2020-11-01
2. High-Performance Back-Channel-Etch Thin-Film Transistors With Zinc Tin Oxide as Barrier Layer via Spray Coating;IEEE Transactions on Electron Devices;2019-09
3. Back-Channel-Etched Oxide Thin Film Transistors with a Corrosion Resistant Crystalline InGaO Channel;ECS Journal of Solid State Science and Technology;2019
4. Back-Channel-Etched Thin-Film Transistors With Tunable Acid-Resistant Zr-Doped Indium Oxide Active Layer;IEEE Transactions on Electron Devices;2019-01
5. Characteristic of BCE Type IGZO Thin Film Transistor Device with Various Source/Drain Metals;Journal of Nanoscience and Nanotechnology;2017-11-01
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