Characteristics of a nickel thin film and formation of nickel silicide by using remote plasma atomic layer deposition with Ni( i Pr-DAD)2
Author:
Publisher
Korean Physical Society
Subject
General Physics and Astronomy
Link
http://link.springer.com/content/pdf/10.3938/jkps.66.821.pdf
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The microstructural and stress evolution in sputter deposited Ni thin films;Surface and Coatings Technology;2021-04
2. Magnetoresistive properties of cobalt thin films grown by plasma-assisted atomic layer deposition;Journal of Physics D: Applied Physics;2020-12-22
3. Plasma-Enhanced Atomic Layer Deposition of Low Resistivity and Ultrathin Manganese Oxynitride Films with Excellent Resistance to Copper Diffusion;ACS Applied Electronic Materials;2020-05-21
4. Atomic Layer Deposition of Nickel Nitride Thin Films using NiCl 2 (TMPDA) and Tert‐Butylhydrazine as Precursors;physica status solidi (a);2019-04
5. High growth per cycle thermal atomic layer deposition of Ni films using an electron-rich precursor;Nanoscale;2019
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