Ideality factor of GaN-based light-emitting diodes determined by the measurement of photovoltaic characteristics
Author:
Publisher
Korean Physical Society
Subject
General Physics and Astronomy
Link
http://link.springer.com/content/pdf/10.3938/jkps.65.1639.pdf
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Self-powered action in metal-semiconductor-metal ultraviolet photodetectors based on AlGaN/GaN high electron mobility transistor structures on different substrates;Optical Materials;2024-04
2. Enhanced Performance of Metal‐Semiconductor‐Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole Patterning;Advanced Materials Interfaces;2024-01-08
3. Extracting the inherent ideality factor of a diode from electrical current–voltage characteristics;Electronics Letters;2023-11-30
4. Electrical Leakage Levels Estimated from Luminescence and Photovoltaic Properties under Photoexcitation for GaN-based Light-emitting Diodes;CURR OPT PHOTONICS;2019
5. New view on the variation of forward conduction mechanisms derived from electrical stress in UV-A light emitting diodes;Superlattices and Microstructures;2019-06
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