Characterization of SiO2 Over Poly-Si Mask Etching in Ar/C4F8 Capacitively Coupled Plasma-Reference-Cited by-同舟云学术

Characterization of SiO2 Over Poly-Si Mask Etching in Ar/C4F8 Capacitively Coupled Plasma

Published:2021-11-30 Issue:6 Volume:30 Page:176-182
ISSN:2288-6559
Container-title:Applied Science and Convergence Technology
language:en
Short-container-title:Appl. Sci. Converg. Technol.

Author:

Seong In Ho¹^ORCID,Lee Jang Jae¹^ORCID,Cho Chul Hee¹^ORCID,Lee Yeong Seok¹,Kim Si Jun²^ORCID,You Shin Jae¹³^ORCID

Affiliation:

1. Department of Physics, Chungnam National University, Daejeon 34134, Republic of Korea

2. Nanotech Optoelectronics Research Center, Yongin 16882, Republic of Korea

3. Institute of Quantum Systems (IQS), Chungam National University, Daejeon 34134, Republic of Korea

Funder

Chungnam National University

Publisher

The Korean Vacuum Society

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Condensed Matter Physics,Materials Science (miscellaneous)

Link

http://pdf.medrang.co.kr/ASCT/2021/030/ASCT030-06-176.pdf

Reference14 articles.

1. Highly Selective Etching of Si3 N 4 to SiO2 Employing Fluorine and Chlorine Atoms Generated by Microwave Discharge

2. Characterization of Highly SelectiveSiO2/Si3N4Etching of High-Aspect-Ratio Holes

3. Dynamics of the Profile Charging During $\hbox{SiO}_{2}$ Etching in Plasma for High Aspect Ratio Trenches

4. Z. Yang et al., Proceedings of the 2017 28th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC), (Saratoga Springs, NY, USA, May 15-18, 2017), pp. 421.

5. SiO2 to Si selectivity mechanisms in high density fluorocarbon plasma etching

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