Optical Properties of InAs Quantum Dots Grown by Using Indium Interruption Growth Technique-Reference-Cited by-同舟云学术

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Optical Properties of InAs Quantum Dots Grown by Using Indium Interruption Growth Technique

Published:2009-11-30 Issue:6 Volume:18 Page:474-480
ISSN:1225-8822
Container-title:Journal of the Korean Vacuum Society
language:en
Short-container-title:Journal of the Korean Vacuum Society

Author:

Lee Hi-Jong,Ryu Mee-Yi,Kim Jin-Soo

Publisher

The Korean Vacuum Society

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Condensed Matter Physics,Materials Science (miscellaneous)

Link

http://ocean.kisti.re.kr/downfile/crosscheck/kvs/JAKO200908939909657.pdf

Reference15 articles.

1. Multidimensional quantum well laser and temperature dependence of its threshold current

2. Low-threshold oxide-confined 1.3-μm quantum-dot laser

3. Room temperature continuous-wave operation of InAs∕InP(100) quantum dot lasers grown by gas-source molecular-beam epitaxy

4. Anisotropic optical response of InAs/InP quantum dot avalanche photodiodes

5. Strain-compensated InAs/GaNAs quantum dots for use in high-efficiency solar cells

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Growth Temperature on the Luminescence Properties of InP/GaP Short-Period Superlattice Structures;Applied Science and Convergence Technology;2015-01-30

2. Luminescence Properties of InAs/GaAs Quantum Dots Grown by MEE Method;Journal of the Korean Vacuum Society;2013-03-30

3. Optical Properties of InAs Quantum Dots Grown by Changing Arsenic Interruption Time;Journal of the Korean Vacuum Society;2013-03-30

4. Influence of InGaAs Capping Layers on the Properties of InAs/GaAs Quantum Dots;Journal of the Korean Vacuum Society;2012-11-30

5. Optical Characteristics of Multi-Stacked InAs/InAlGaAs Quantum Dots;Journal of the Korean Vacuum Society;2011-11-30

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