Lateral current injection GaInAsP/InP laser on semi-insulating substrate for membrane-based photonic circuits-Reference-Cited by-同舟云学术

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Lateral current injection GaInAsP/InP laser on semi-insulating substrate for membrane-based photonic circuits

Published:2009-07-20 Issue:15 Volume:17 Page:12564
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Okumura Tadashi,Kurokawa Munetaka,Shirao Mizuki,Kondo Daisuke,Ito Hitomi,Nishiyama Nobuhiko,Maruyama Takeo,Arai Shigehisa

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference19 articles.

1. Technology and reliability constrained future copper interconnects. I. Resistance modeling

2. Technology and reliability constrained future copper interconnects. II. Performance implications

3. Rationale and challenges for optical interconnects to electronic chips

4. Predictions of CMOS compatible on-chip optical interconnect

5. Single-chip 40-channel InP transmitter photonic integrated circuit capable of aggregate data rate of 1.6 Tbit/s

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Scaling photonic integrated circuits with InP technology: A perspective;APL Photonics;2024-05-01

2. Lateral carrier injection for the uniform pumping of several quantum wells in InGaN/GaN light-emitting diodes;Optics Express;2021-01-19

3. 20 Gbps operation of membrane-based GaInAs/InP waveguide-type p–i–n photodiode bonded on Si substrate;Applied Physics Express;2018-01-25

4. Integrated Optical Link on Si Substrate Using Membrane Distributed-Feedback Laser and p-i-n Photodiode;IEEE Journal of Selected Topics in Quantum Electronics;2017-11

5. Low-bias current 10 Gbit/s direct modulation of GaInAsP/InP membrane DFB laser on silicon;Optics Express;2016-08-04

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