Numerical investigation on the enhanced carrier collection efficiency of Ga-face GaN/InGaN p-i-n solar cells with polarization compensation interlayers-Reference-Cited by-同舟云学术

Numerical investigation on the enhanced carrier collection efficiency of Ga-face GaN/InGaN p-i-n solar cells with polarization compensation interlayers

Published:2011-09-01 Issue:17 Volume:36 Page:3500
ISSN:0146-9592
Container-title:Optics Letters
language:en
Short-container-title:Opt. Lett.

Author:

Chang Jih-Yuan,Liou Bo-Ting,Lin Han-Wei,Shih Ya-Hsuan,Chang Shu-Hsuan,Kuo Yen-Kuang

Funder

National Science Council of Taiwan (NSCT)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference18 articles.

1. The impact of piezoelectric polarization and nonradiative recombination on the performance of (0001) face GaN/InGaN photovoltaic devices

2. Effects of polarization charge on the photovoltaic properties of InGaN solar cells

3. Numerical Study on the Influence of Piezoelectric Polarization on the Performance of p-on-n (0001)-Face GaN/InGaN p-i-n Solar Cells

4. Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures

5. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

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