Picosecond passively mode-locked GaSb-based semiconductor disk laser operating at 2μm-Reference-Cited by-同舟云学术

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Picosecond passively mode-locked GaSb-based semiconductor disk laser operating at 2μm

Published:2010-12-01 Issue:24 Volume:35 Page:4090
ISSN:0146-9592
Container-title:Optics Letters
language:en
Short-container-title:Opt. Lett.

Author:

Härkönen Antti,Paajaste Jonna,Suomalainen Soile,Alanko Jukka-Pekka,Grebing Christian,Koskinen Riku,Steinmeyer Günter,Guina Mircea

Funder

United States Office of Naval Research (ONR) Global

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference12 articles.

1. Coherent lidar airborne wind sensor II: flight-test results at 2 and 10 μm

2. Cw high-power IR laser at 2 μm for minimally invasive surgery

3. High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM/sub 00/ beams

4. High-power, (AlGaIn)(AsSb) semiconductor disk laser at 20 μm

5. High-power and broadly tunable GaSb-based optically pumped VECSELs emitting near 2μm

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1. Self−Mode−Locked 2−μm GaSb−Based Optically Pumped Semiconductor Disk Laser;Applied Sciences;2023-06-06

2. Bandgap engineering, monolithic growth, and operation parameters of GaSb-based SESAMs in the 2–2.4 µm range;Optical Materials Express;2022-06-01

3. Mo:BiVO4 Nanoparticles-Based Optical Modulator and Its Application in a 2-μm Pulsed Laser;Nanomaterials;2021-11-29

4. High average output power from a backside-cooled 2-µm InGaSb VECSEL with full gain characterization;Optics Express;2021-11-18

5. 500 W peak power cavity dumped 2 µm GaSb-based VECSEL;Applied Optics;2021-07-13

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