High average output power from a backside-cooled 2-µm InGaSb VECSEL with full gain characterization
Author:
Funder
European Research Council
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference36 articles.
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1. Gigahertz semiconductor laser at a center wavelength of 2 µm in single and dual-comb operation;Optics Express;2023-12-18
2. High output power, single mode, and TEM00 operation of a multiple gain chip VECSEL using a twisted-mode configuration;Optics Express;2023-03-31
3. 3-W output power from a 2-µm InGaSb VECSEL using a hybrid metal-semiconductor Bragg reflector;Optical Materials Express;2023-03-01
4. Identification of the Segregation Kinetics of Ultrathin GaAsSb/GaAs Films Using AlAs Markers;Nanomaterials;2023-02-22
5. Modelocked InGaSb-MIXSEL at 2.04 µm;CLEO 2023;2023
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