Ultrafast THz modulators with WSe2 thin films [Invited]-Reference-Cited by-同舟云学术

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Ultrafast THz modulators with WSe2 thin films [Invited]

Published:2019-01-28 Issue:2 Volume:9 Page:826
ISSN:2159-3930
Container-title:Optical Materials Express
language:en
Short-container-title:Opt. Mater. Express

Author:

Gopalan Prashanth,Chanana Ashish,Krishnamoorthy Sriram,Nahata Ajay,Scarpulla Michael A.,Sensale-Rodriguez Berardi

Funder

National Science Foundation

Publisher

The Optical Society

Subject

Electronic, Optical and Magnetic Materials

Reference55 articles.

1. Electron Spin-relaxation Dynamics in GaAs/AlGaAs Quantum Wells and InGaAs/InP Quantum Wells

2. Ultrafast all-optical switching at 1.3 [micro sign]m/1.55 [micro sign]m using novel InGaAs/AlAsSb/InP coupled double quantum well structure for intersubband transitions

3. Subpicosecond carrier dynamics in low-temperature grown GaAs as measured by time-resolved terahertz spectroscopy

4. High-mobility field-effect transistors based on transition metal dichalcogenides

5. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity

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1. Creating Anti‐Chiral Exceptional Points in Non‐Hermitian Metasurfaces for Efficient Terahertz Switching;Advanced Science;2024-05-17

2. Nonlinear photocarrier dynamics in multilayer W S e ₂ induced by intense terahertz pulses;Journal of the Optical Society of America B;2023-11-08

3. Reassessing Fano Resonance for Broadband, High‐Efficiency, and Ultrafast Terahertz Wave Switching;Advanced Science;2022-11-17

4. Advanced Devices Using Two‐Dimensional Layer Technology;Fundamentals of Terahertz Devices and Applications;2021-07-12

5. Ultrafast THz modulators with WSe2 thin films: erratum;Optical Materials Express;2021-06-18

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