Bandgap energy bowing parameter of strained and relaxed InGaN layers-Reference-Cited by-同舟云学术

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Bandgap energy bowing parameter of strained and relaxed InGaN layers

Published:2014-04-29 Issue:5 Volume:4 Page:1030
ISSN:2159-3930
Container-title:Optical Materials Express
language:en
Short-container-title:Opt. Mater. Express

Author:

Orsal G.,El Gmili Y.,Fressengeas N.,Streque J.,Djerboub R.,Moudakir T.,Sundaram S.,Ougazzaden A.,Salvestrini J.P.

Funder

French National Research Agency (ANR)

Publisher

The Optical Society

Subject

Electronic, Optical and Magnetic Materials

Reference34 articles.

1. Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes

2. 444.9 nm semipolar (112¯2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer

3. Optical Gain and Laser Characteristics of InGaN Quantum Wells on Ternary InGaN Substrates

4. High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

5. High internal and external quantum efficiency InGaN/GaN solar cells

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1. Growth of Three-Dimensional InGaN Nanostructures by Plasma-Assisted Molecular Beam Epitaxy;ACS Applied Nano Materials;2024-07-20

2. On the growth of InGaN nanowires by molecular-beam epitaxy: influence of the III/V flux ratio on the structural and optical properties;Поверхность. Рентгеновские, синхротронные и нейтронные исследования;2024-04-15

3. On the Growth of InGaN Nanowires by Molecular-Beam Epitaxy: Influence of the III/V Flux Ratio on the Structural and Optical Properties;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2024-04

4. Optical wireless communications with InGaN multiple-quantum-well photodiodes grown with the prestrained superlattice interlayer for light detection;Materials Science in Semiconductor Processing;2024-03

5. Effect of Nitrogen Plasma Treatment on the Structural and Optical Properties of InGaN;Technical Physics Letters;2023-12

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