P-side-up thin-film AlGaInP-based light emitting diodes with direct ohmic contact of an ITO layer with a GaP window layer
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference13 articles.
1. High-Efficiency 1-mm$^{2}$ AlGaInP LEDs Sandwiched by ITO Omni-Directional Reflector and Current-Spreading Layer
2. AlGaInP/mirror/Si light-emitting diodes with vertical electrodes by wafer bonding
3. P-side up AlGaInP-based light emitting diodes with dot-patterned GaAs contact layers
4. Ultra bright AlGaInP light emitting diodes with pyramidally patterned GaP spreading layer
5. Light-emitting diode extraction efficiency
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