Investigation on bandgap, diffraction, interference, and refraction effects of photonic crystal structure in GaN/InGaN LEDs for light extraction
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics,Engineering (miscellaneous),Electrical and Electronic Engineering
Reference29 articles.
1. InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures
2. Enhancement of the light output performance for GaN-based light-emitting diodes by bottom pillar structure
3. Nitride-based near-ultraviolet light emitting diodes with meshed p‐GaN
4. High Extraction Efficiency of Spontaneous Emission from Slabs of Photonic Crystals
5. Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures
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3. Numerical analysis of light extraction enhancement of GaN-based thin-film flip-chip light-emitting diodes with high-refractive-index buckling nanostructures;Results in Physics;2018-06
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