Reduced Stark shift in three-dimensionally confined GaN/AlGaN asymmetric multi-quantum disks-Reference-Cited by-同舟云学术

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Reduced Stark shift in three-dimensionally confined GaN/AlGaN asymmetric multi-quantum disks

Published:2015-03-23 Issue:4 Volume:5 Page:849
ISSN:2159-3930
Container-title:Optical Materials Express
language:en
Short-container-title:Opt. Mater. Express

Author:

Park Young S.,Chan Christopher C. S.,Reid Benjamin P. L.,Holmes Mark J.,Coles David M.,Alexander-Webber Jack A.,Nicholas Robin J.,Taylor Robert A.,Lee Seung-Woong,Yang Woochul,Im Hyunsik

Funder

Basic Science Research Program

National Research Foundation of Korea (NRF)

Ministry of Education, Science and Technology

Publisher

The Optical Society

Subject

Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Nitride-based semiconductors for blue and green light-emitting devices

2. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

3. The influence of the strain‐induced electric field on the charge distribution in GaN‐AlN‐GaN structure

4. Spontaneous polarization and piezoelectric constants of III-V nitrides

5. ColumnarAlGaN/GaNNanocavities withAlN/GaNBragg Reflectors Grown by Molecular Beam Epitaxy on Si(111)

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Carrier confinement effects of In Ga1-N/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods;Optical Materials;2018-04

2. Bias-Controlled Optical Transitions in GaN/AlN Nanowire Heterostructures;ACS Nano;2017-08-14

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