Fabrication of patterned sapphire substrate and effect of light emission pattern on package efficiency-Reference-Cited by-同舟云学术

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Fabrication of patterned sapphire substrate and effect of light emission pattern on package efficiency

Published:2015-07-15 Issue:8 Volume:5 Page:1784
ISSN:2159-3930
Container-title:Optical Materials Express
language:en
Short-container-title:Opt. Mater. Express

Author:

Li Xu-Fong,Huang Shih-Wei,Lin Hong-Yu,Lu Chun-Yan,Yang Shang-Fu,Sun Ching-Cherng,Liu Cheng-Yi

Funder

Aim for the Top University Project

National Central University, Taoyuan, Taiwan

Energy Technology Program for Academia, Bureau of Energy, Ministry of Economic Affairs

Publisher

The Optical Society

Subject

Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Effect of periodic deflector embedded in InGaN∕GaN light emitting diode

2. InGaN-based 405 nm near-ultraviolet light emitting diodes on pillar patterned sapphire substrates

3. Light emitting diodes based on sidewall m-plane epitaxy of etched GaN/sapphire templates

4. Packaging efficiency in phosphor-converted white LEDs and its impact to the limit of luminous efficacy

5. Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro- and nanoscale

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaN nucleation on patterned sapphire substrate with different shapes for improved GaN overgrowth;Vacuum;2022-03

2. A Systematic Exploration of InGaN/GaN Quantum Well-Based Light Emitting Diodes on Semipolar Orientations;Optics and Spectroscopy;2022-03

3. Effect of nucleation time on GaN layer grown on different shapes of patterned sapphire substrate;International Journal of Nanotechnology;2022

4. Application of patterned sapphire substrate for III-nitride light-emitting diodes;Nanoscale;2022

5. Continuum level-set model for anisotropic wet etching of patterned sapphire substrates;Semiconductor Science and Technology;2021-03-10

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