Author:
Wood O. R.,Bjorkholm J. E.,Dreyer K. F.,Fetter L.,Himel M. D.,Freeman R. R.,Tennant D. M.,Griffith J. E.,Taylor G. N.,Waskiewicz W. K.,White D. L.,Windt D. L.,MacDowell A.A.,La Fontaine B.,Lum B. M.,R. A.,Neureuther ,Kortright J. B.,Gullikson E. M.,Nguyen K. B.
Abstract
Both experiment and simulation of EUV lithographic resist patterning show that high resist absorption in the 7 to 40 nm wavelength region leads to unsatisfactory sidewall profiles in single-layer resists except at the shortest wavelengths.