Ultrafast carrier dynamics in an InAs/InGaAs quantum dots-in-a-well heterostructure-Reference-Cited by-同舟云学术

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Ultrafast carrier dynamics in an InAs/InGaAs quantum dots-in-a-well heterostructure

Published:2008 Issue:2 Volume:16 Page:1165
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Prasankumar R. P.,Attaluri R. S.,Averitt R. D.,Urayama J.,Weisse-Bernstein N.,Rotella P.,Stintz A. D.,Krishna S.,Taylor A. J.

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Super-gain nanostructure with self-assembled well-wire complex energy-band engineering for high performance of tunable laser diodes;Nanophotonics;2023-03-27

2. Role of Intra‐Band Relaxation of Holes and Tunneling of Electrons in Carrier Relaxation in AlGaAs/GaAs Quantum Well;physica status solidi (b);2022-03-02

3. 低维铟基阱－点复合量子结构及光学性能和应用前景;Chinese Journal of Lasers;2022

4. Impact of Built‐In Electric Field on the Emission Characteristics of InAs/GaAs Quantum Dot Laser Structure;physica status solidi (b);2021-05-20

5. Improved optical properties of InAs submonolayer quantum dots in GaAsSb/InGaAs double-well structure;Applied Physics Letters;2019-08-26

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