On-Chip Optical Power Monitoring of GaN-on-Si LEDs

Abstract

The reliability of GaN-on-Si LEDs is of concern. A p-i-n photodiode loop surrounding the LED was fabricated to monitor the LED output power by detecting some of the downward emitting light propagating through the n-GaN layer. The monitoring responsivities were approximately 52 and 66 mA/W at biases of 0 and -3 V, respectively.