Author:
Shayeganrad Gholamreza,Kim Jongki,Lee Timothy,Beresna Martynas,Brambilla Gilberto,Nilsson Johan,Jung Yongmin
Abstract
We demonstrate that counterintuitively, silicon wafer stealth dicing can be performed with femtosecond laser pulses at 1030-nm, where linear absorption predominates. A 1.3-NA oil-immersion objective mitigated plasma defocusing and delocalization before the focal point.