Author:
DeAngelis Emma,Gao Hantian,Yaseen M.,Kuz C.,Brillson L.,Chowdhury Enam
Abstract
We present results of 100-fs, 1030nm laser damage in single crystal n-type ß-gallium oxide, a wide-bandgap semiconductor. KPFM (Kelvin Probe Force Microscopy) and cathodoluminescence analysis reveals laser-induced defects that are undetectable by atomic force/optical microscopy.
Cited by
1 articles.
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